Aydan wrote:

>> to cause chemical changes in the
>> chip material which either 'connects' or 'disconnects' circuit pathways,
>> thus forming a ROM.
> 
> Partly right. You erase with UV-radiation and program with a higher than usual
> voltage
> The programming works by trapping electrons inside an insulated gate of the
> field effect transistors used to form the logic gates thus enabling the
> connection. The erasing via UV gives the trapped electrons enough energy to
> leave the gate and thus disabling the transistor

Interesting. I was under the impression that you use UV to program it 
too - much the same way that you use a laser to burn a CD. (Obviously 
you don't actually "burn" anything; you induce a chemical change in the 
ink.)

>> Of course, flash RAM uses chemical changes to permanently store data
>> too;
> 
> Wrong. Works the same as in eeprom with electricity and trapped electrons

Again, I was under the impression that you use a large current to 
chemically change the components such that they now respond to 
electricity differently, and that's how you store information.

>> you just don't need the lense and the UV radiation. But I didn't
>> think you could use that technology to physically change connections...
> 
> you don't physically change connections but control switches in the connections.

Mmm, OK.

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