Dan Connelly wrote:
 
> The problem reminds me of the one in semiconductor device processing,
> where Monte-Carlo is being used to predict the distribution of ions
> which result from the bombardment of semiconductor device surfaces
> with charged dopants.  Some excellent results were demonstrated
> at the latest International Electron Device Conference in San Francisco
> of the use of some clever but relatively simple techniques to get
> more out of each randomly sampled ion event.  For example, one can
> do "particle splitting" in which more than one particle shares part of a path,
> but then part way through is split into multiple particles to generate
> different random paths.  But I digress....

I regress ...

What is the benefit of the above process. It sounds like
they are trying to increase electron flow while reducing
resistance at the junction. Mosfet applications ?

-- 
Ken Tyler

tyl### [at] pacbellnet

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